 |  | | |
| PartNumber | RN1965(TE85L,F) | RN1965(TE85LF)CT-ND | RN1965 |
| Description | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 2.2 kOhms | - | - |
| Typical Resistor Ratio | 0.0468 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | US-6 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Maximum Operating Frequency | 250 MHz | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Brand | Toshiba | - | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1965(TE85L,F) | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz | |
| RN1965FE(TE85L,F) | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| RN1965FS(TPL3) | Bipolar Transistors - Pre-Biased 2.2K x 47Kohms Polarity=NPNx2 | ||
| RN1965FE(TE85L,F) | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| RN1965FE | Neu und Original | ||
| RN1965(TE85LF)CT-ND | Neu und Original | ||
| RN1965(TE85LF)DKR-ND | Neu und Original | ||
| RN1965(TE85LF)TR-ND | Neu und Original | ||
| RN1965FE(TE85LF)CT-ND | Neu und Original | ||
| RN1965FE(TE85LF)DKR-ND | Neu und Original | ||
| RN1965FE(TE85LF)TR-ND | Neu und Original | ||
| RN1965 | Neu und Original |