RN1966F

RN1966FE(TE85L,F) vs RN1966FE(TE85LF)CT-ND vs RN1966FE

 
PartNumberRN1966FE(TE85L,F)RN1966FE(TE85LF)CT-NDRN1966FE
DescriptionBipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio0.1--
Mounting StyleSMD/SMT--
Package / CaseSOT-563--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation100 mW--
SeriesRN1966--
PackagingReel--
Emitter Base Voltage VEBO5 V--
BrandToshiba--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1966FE(TE85L,F) Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1966FS(TPL3) Bipolar Transistors - Pre-Biased 4.7K x 47Kohms Polarity=NPNx2
RN1966FE(TE85L,F) Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1966FE(TE85LF)CT-ND Neu und Original
RN1966FE(TE85LF)DKR-ND Neu und Original
RN1966FE(TE85LF)TR-ND Neu und Original
RN1966FE Neu und Original
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