 |  | | |
| PartNumber | RN2103MFV,L3F | RN2103MFV(TPL3) | RN2103MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased -50V -100mA 22x22Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | N | - |
| Configuration | Single | Single | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 22 kOhms, 22 kOhms | 22 kOhms | - |
| Typical Resistor Ratio | 1 | 1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 70 | 70 | - |
| Maximum Operating Frequency | 250 MHz | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | 50 V | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN2103MF | RN2103MF | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 10 V | - | - |
| Brand | Toshiba | Toshiba | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Peak DC Collector Current | - | 100 mA | - |
| DC Current Gain hFE Max | - | 70 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN2103MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | |
| RN2103MFV(TPL3) | Bipolar Transistors - Pre-Biased -50V -100mA 22x22Kohms | ||
| RN2103MFV(TPL3) | Bipolar Transistors - Pre-Biased -50V -100mA 22x22Kohms | ||
| RN2103MFVL3F-ND | Neu und Original | ||
| RN2103MFV | Neu und Original |