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| PartNumber | RN2107MFV,L3F | RN2107MFV(TPL3) | RN2107MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 10kohm | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 10K x 47Kohms | |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | N | - |
| Configuration | Single | Single | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 10 kOhms | 10 kOhms | - |
| Typical Resistor Ratio | 0.213 | 0.213 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 80 | 80 | - |
| Collector Emitter Voltage VCEO Max | - 50 V | 50 V | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Peak DC Collector Current | - 100 mA | 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN2107MF | RN2107MF | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 6 V | - | - |
| Brand | Toshiba | Toshiba | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000053 oz | - | - |
| DC Current Gain hFE Max | - | 80 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN2107MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 10kohm | |
| RN2107MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 10K x 47Kohms | ||
| RN2107MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 10K x 47Kohms | ||
| RN2107MFVL3F-ND | Neu und Original | ||
| RN2107MFV | Neu und Original | ||
| RN2107MFV/L3F | Neu und Original |