RN2109M

RN2109MFV(TL3,T) vs RN2109MFV(TPL3) vs RN2109MFV

 
PartNumberRN2109MFV(TL3,T)RN2109MFV(TPL3)RN2109MFV
DescriptionBipolar Transistors - Pre-Biased Bias Resistor PNP 47kohm -100mA -50VBipolar Transistors - Pre-Biased 100mA -50volts 3Pin 47K x 22Kohms
ManufacturerToshibaToshibaTOSHIBA
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSY--
SeriesRN2109MFV--
PackagingReelReel-
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity8000--
SubcategoryTransistors--
Mounting Style-SMD/SMT-
Configuration-Single-
Pd Power Dissipation-150 mW-
Maximum Operating Temperature-+ 150 C-
Collector Emitter Voltage VCEO Max-50 V-
Transistor Polarity-PNP-
Continuous Collector Current-- 100 mA-
DC Collector Base Gain hfe Min-70-
Typical Input Resistor-47 kOhms-
Typical Resistor Ratio-2.14-
Peak DC Collector Current-100 mA-
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN2109MFV(TL3,T) Bipolar Transistors - Pre-Biased Bias Resistor PNP 47kohm -100mA -50V
RN2109MFV,L3F Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 47kohm
RN2109MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 47K x 22Kohms
RN2109MFV(TL3,T) Bipolar Transistors - Pre-Biased Bias Resistor PNP 47kohm -100mA -50V
RN2109MFV Neu und Original
RN2109MFVL3F-ND Neu und Original
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