RN2110

RN2110,LF(CT vs RN2110 vs RN2110(TE85L)

 
PartNumberRN2110,LF(CTRN2110RN2110(TE85L)
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
Transistor PolarityPNP--
Typical Input Resistor4.7 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-416-3--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Pd Power Dissipation100 mW--
SeriesRN2110--
PackagingReel--
Emitter Base Voltage VEBO- 5 V--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
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