 |  | | |
| PartNumber | RN2117MFV,L3F | RN2117MFV(TPL3) | RN2117MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 10Kohms x 4.7Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 10 kOhms, 4.7 kOhms | 10 kOhms | - |
| Typical Resistor Ratio | 2.13 | 2.13 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Pd Power Dissipation | 150 mW | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN2117 | - | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 15 V | - | - |
| Brand | Toshiba | - | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Pd Power Dissipation | - | 150 mW | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Collector Emitter Voltage VCEO Max | - | - 50 V | - |
| Emitter Base Voltage VEBO | - | - 15 V | - |
| DC Collector Base Gain hfe Min | - | 30 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN2117MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | |
| RN2117MFV(TPL3) | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 10Kohms x 4.7Kohms | ||
| RN2117MFVL3F-ND | Neu und Original | ||
| RN2117MFV | Neu und Original | ||
| RN2117MFV,L3F | X34 PB-F VESM TRANSISTOR PD 150M |