RN2119

RN2119MFV(TPL3) vs RN2119MFV(TPL3)CT-ND vs RN2119MFV

 
PartNumberRN2119MFV(TPL3)RN2119MFV(TPL3)CT-NDRN2119MFV
DescriptionBipolar Transistors - Pre-Biased Bias Resistor
ManufacturerToshiba-Toshiba
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Single, Pre-Biased
RoHSY--
ConfigurationSingle-Single
Transistor PolarityPNP-PNP
Typical Input Resistor1 kOhms-1 kOhms
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-723--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA-- 100 mA
Peak DC Collector Current100 mA-100 mA
Pd Power Dissipation150 mW--
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesRN2119--
PackagingReel-Reel
Collector Base Voltage VCBO- 50 V--
DC Current Gain hFE Max400--
Emitter Base Voltage VEBO- 5 V--
Height0.5 mm--
Length1.2 mm--
Operating Temperature Range- 65 C to + 150 C--
TypePNP Epitaxial Silicon Transistor--
Width0.8 mm--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity8000--
SubcategoryTransistors--
Package Case--SOT-723
Pd Power Dissipation--150 mW
Collector Emitter Voltage VCEO Max--- 50 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--120
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN2119MFV(TPL3) Bipolar Transistors - Pre-Biased Bias Resistor
RN2119MFV(TPL3) Bipolar Transistors - Pre-Biased Bias Resisto
RN2119MFV(TPL3)CT-ND Neu und Original
RN2119MFV(TPL3)DKR-ND Neu und Original
RN2119MFV(TPL3)TR-ND Neu und Original
RN2119MFV Neu und Original
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