RN2130

RN2130MFV,L3F vs RN2130MFV(TPL3) vs RN2130MFV

 
PartNumberRN2130MFV,L3FRN2130MFV(TPL3)RN2130MFV
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in TransistorBipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx100Kohms
ManufacturerToshibaToshiba-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationSingleSingle-
Transistor PolarityPNPPNP-
Typical Input Resistor100 kOhms100 kOhms-
Typical Resistor Ratio11-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-723-3SOT-723-
DC Collector/Base Gain hfe Min100100-
Collector Emitter Voltage VCEO Max- 50 V- 50 V-
Continuous Collector Current- 100 mA- 100 mA-
Pd Power Dissipation150 mW150 mW-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesRN2130RN2130-
PackagingReelReel-
Emitter Base Voltage VEBO- 10 V- 10 V-
BrandToshibaToshiba-
Number of Channels1 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity80008000-
SubcategoryTransistorsTransistors-
Peak DC Collector Current-100 mA-
Minimum Operating Temperature-- 65 C-
Collector Base Voltage VCBO-- 50 V-
DC Current Gain hFE Max-100-
Height-0.5 mm-
Length-1.2 mm-
Operating Temperature Range-- 65 C to + 150 C-
Type-PNP Epitaxial Silicon Transistor-
Width-0.8 mm-
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN2130MFV,L3F Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
RN2130MFV(TPL3) Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx100Kohms
RN2130MFV(TPL3) Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx100Kohms
RN2130MFVL3F Bipolar Transistors - Pre-Biased VESM TRAN PD 150MW /1MHZ (LF)
RN2130MFVL3F-ND Neu und Original
RN2130MFV Neu und Original
RN2130MFV,L3F X34 PB-F VESM TRANSISTOR PD 150M
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