PartNumber | RN2130MFV,L3F | RN2130MFV(TPL3) | RN2130MFV |
Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx100Kohms | |
Manufacturer | Toshiba | Toshiba | - |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
RoHS | Y | N | - |
Configuration | Single | Single | - |
Transistor Polarity | PNP | PNP | - |
Typical Input Resistor | 100 kOhms | 100 kOhms | - |
Typical Resistor Ratio | 1 | 1 | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-723-3 | SOT-723 | - |
DC Collector/Base Gain hfe Min | 100 | 100 | - |
Collector Emitter Voltage VCEO Max | - 50 V | - 50 V | - |
Continuous Collector Current | - 100 mA | - 100 mA | - |
Pd Power Dissipation | 150 mW | 150 mW | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | RN2130 | RN2130 | - |
Packaging | Reel | Reel | - |
Emitter Base Voltage VEBO | - 10 V | - 10 V | - |
Brand | Toshiba | Toshiba | - |
Number of Channels | 1 Channel | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
Factory Pack Quantity | 8000 | 8000 | - |
Subcategory | Transistors | Transistors | - |
Peak DC Collector Current | - | 100 mA | - |
Minimum Operating Temperature | - | - 65 C | - |
Collector Base Voltage VCBO | - | - 50 V | - |
DC Current Gain hFE Max | - | 100 | - |
Height | - | 0.5 mm | - |
Length | - | 1.2 mm | - |
Operating Temperature Range | - | - 65 C to + 150 C | - |
Type | - | PNP Epitaxial Silicon Transistor | - |
Width | - | 0.8 mm | - |