 | | | |
| PartNumber | RN2316(TE85L,F) | RN2316 | RN2316(TE85LF) |
| Description | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 10Kohms | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | PNP | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Typical Resistor Ratio | 0.47 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70 | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN2316 | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 50 | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Width | 1.25 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000988 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN2316(TE85L,F) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 10Kohms | |
| RN2316(TE85L,F) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 10Kohms | ||
| RN2316LF | Neu und Original | ||
| RN2316(TE85LF)CT-ND | Neu und Original | ||
| RN2316(TE85LF)DKR-ND | Neu und Original | ||
| RN2316(TE85LF)TR-ND | Neu und Original | ||
| RN2316 | Neu und Original | ||
| RN2316(TE85LF) | Neu und Original |