RN2501

RN2501(TE85L,F) vs RN2501 vs RN2501(TE85L)

 
PartNumberRN2501(TE85L,F)RN2501RN2501(TE85L)
DescriptionBipolar Transistors - Pre-Biased Gen Trans PNP x 2 SMV, -50V, -100A
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSMV-5--
DC Collector/Base Gain hfe Min30--
Maximum Operating Frequency200 MHz--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesRN2501--
PackagingReel--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO10 V--
Operating Temperature Range- 55 C to + 150 C--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN2501(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 SMV, -50V, -100A
RN2501(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 SMV, -50V, -100A
RN2501 Neu und Original
RN2501(TE85L) Neu und Original
RN2501(TE85L.F) Neu und Original
RN2501(TE85LF) Neu und Original
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