PartNumber | RN2711(TE85L,F) | RN2711JE(TE85L,F) | RN2710JE(TE85L,F) |
Description | Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | - | - |
Configuration | Dual | Dual | Dual |
Transistor Polarity | PNP | PNP | PNP |
Typical Input Resistor | 10 kOhms | 10 kOhms | 4.7 kOhms |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-353-5 | ESV-6 | ESV-5 |
DC Collector/Base Gain hfe Min | 120 | 120 | 120 |
Collector Emitter Voltage VCEO Max | - 50 V | - 50 V | - 50 V |
Continuous Collector Current | - 100 mA | - 100 mA | - 100 mA |
Pd Power Dissipation | 200 mW | 100 mW | 100 mW |
Series | RN2711 | - | - |
Packaging | Reel | Reel | Reel |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - 5 V |
Brand | Toshiba | Toshiba | Toshiba |
Maximum DC Collector Current | - 100 mA | - 100 mA | - 100 mA |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | 4000 | 4000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000212 oz | - | - |
Maximum Operating Frequency | - | 200 MHz | 200 MHz |
Peak DC Collector Current | - | - 100 mA | - 100 mA |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Channel Mode | - | Enhancement | Enhancement |