RN490

RN4907FE,LF(CT vs RN4907FELF(CT vs RN4907:NPPN:200M

 
PartNumberRN4907FE,LF(CTRN4907FELF(CTRN4907:NPPN:200M
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in transistorBipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/ 1MH
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
Transistor PolarityNPN, PNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio0.213--
Mounting StyleSMD/SMT--
Package / CaseSOT-563--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation100 mW--
SeriesRN4907--
PackagingReel--
Emitter Base Voltage VEBO6 V--
BrandToshiba--
Number of Channels2 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN4907FE,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN4907FE,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
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