RN4902F

RN4902FE(TE85L,F) vs RN4902FE(TE85LF)CT-ND vs RN4902FE

 
PartNumberRN4902FE(TE85L,F)RN4902FE(TE85LF)CT-NDRN4902FE
DescriptionBipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN, PNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseES6-6--
DC Collector/Base Gain hfe Min50--
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation100 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesRN4902--
PackagingReel--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO10 V--
Operating Temperature Range- 55 C to + 150 C--
BrandToshiba--
Number of Channels2 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN4902FE(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A
RN4902FE,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN4902FE,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
RN4902FE(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A
RN4902FETE85LF Neu und Original
RN4902FE(TE85LF)CT-ND Neu und Original
RN4902FE(TE85LF)DKR-ND Neu und Original
RN4902FE(TE85LF)TR-ND Neu und Original
RN4902FELF(CTCT-ND Neu und Original
RN4902FELF(CTDKR-ND Neu und Original
RN4902FELF(CTTR-ND Neu und Original
RN4902FELF(CT Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/1MHZ
RN4902FE Neu und Original
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