 |  | | |
| PartNumber | RN4981FE,LF(CT | RN4981FELF(CT | RN4981FE |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/1MHZ | |
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | NPN, PNP | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563 | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Series | RN4981 | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Brand | Toshiba | - | - |
| Number of Channels | 2 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN4981FE,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | |
| RN4981FE,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto | ||
| RN4981FELF(CTCT-ND | Neu und Original | ||
| RN4981FELF(CTDKR-ND | Neu und Original | ||
| RN4981FELF(CTTR-ND | Neu und Original | ||
| RN4981FELF(CT | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/1MHZ | ||
| RN4981FE | Neu und Original |