RQ1C

RQ1C065UNTR vs RQ1C065U1V vs RQ1C065UN

 
PartNumberRQ1C065UNTRRQ1C065U1VRQ1C065UN
DescriptionMOSFET 1.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSMT-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6.5 A--
Rds On Drain Source Resistance58 mOhms--
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3 mm--
ProductMOSFET--
Transistor Type1 N-channel--
TypePower MOSFET--
Width2.4 mm--
BrandROHM Semiconductor--
Forward Transconductance Min6 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesRQ1C065UN--
Hersteller Teil # Beschreibung RFQ
RQ1C065UNTR MOSFET 1.5V Drive Nch MOSFET
RQ1C075UNTR MOSFET 1.5V Drive Nch MOSFET
RQ1C065U1V Neu und Original
RQ1C065UN Neu und Original
RQ1C065UNTR MOSFET N-CH 20V 6.5A TSMT8
RQ1C075UN Neu und Original
RQ1C075UN TR Neu und Original
RQ1C075UN. Neu und Original
RQ1C075UNFRATR MOSFET, AEC-Q101, N-CH, 20V, TSMT, Transistor Polarity:N Channel, Continuous Drain Current Id:7.5A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:4.5V, T
RQ1C075UNTR MOSFET N-CH 20V 7.5A TSMT8
RQ1C075UNTR/TSMT8 Neu und Original
RQ1C108M10020BB280 Neu und Original
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