RQ3E08

RQ3E080BNTB vs RQ3E080BN vs RQ3E080BNFU7TB

 
PartNumberRQ3E080BNTBRQ3E080BNRQ3E080BNFU7TB
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSMT-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge14.5 nC--
Pd Power Dissipation2 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-channel--
BrandROHM Semiconductor--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesRQ3E080BN--
Hersteller Teil # Beschreibung RFQ
RQ3E080GNTB MOSFET 4.5V Drive Nch MOSFET
RQ3E080BNTB MOSFET 4.5V Drive Nch MOSFET
RQ3E080GNTB Darlington Transistors MOSFET 4.5V Drive Nch MOSFET
RQ3E080BN Neu und Original
RQ3E080BNFU7TB Neu und Original
RQ3E080BNTB MOSFET N-CH 30V 8A HSMT8
RQ3E080BNTB1 Neu und Original
RQ3E080GN Neu und Original
Top