RT1C060UNT

RT1C060UNTR vs RT1C060UNTL

 
PartNumberRT1C060UNTRRT1C060UNTL
DescriptionMOSFET 1.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseTSST-8-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage20 V-
Id Continuous Drain Current6 A-
Rds On Drain Source Resistance20 mOhms-
Vgs th Gate Source Threshold Voltage300 mV-
Vgs Gate Source Voltage10 V-
Qg Gate Charge11 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation1.25 W-
ConfigurationSingle-
Channel ModeEnhancement-
PackagingReel-
SeriesRT1C060UN-
Transistor Type1 N-Channel-
BrandROHM Semiconductor-
Forward Transconductance Min5.5 S-
Fall Time20 ns-
Product TypeMOSFET-
Rise Time30 ns-
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time75 ns-
Typical Turn On Delay Time7 ns-
Part # AliasesRT1C060UN-
Hersteller Teil # Beschreibung RFQ
RT1C060UNTR MOSFET 1.5V Drive Nch MOSFET
RT1C060UNTL Neu und Original
RT1C060UNTR MOSFET N-CH 20V 6A TSST8
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