 | | | |
| PartNumber | S29GL512T11TFIV10 | S29GL512T11TFB020 | S29GL512T11TFB023 |
| Description | NOR Flash Nor | NOR Flash IC 512 Mb FLASHMEM | NOR Flash IC 512 Mb FLASHMEM |
| Manufacturer | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Product Category | NOR Flash | NOR Flash | NOR Flash |
| RoHS | Y | Y | Y |
| Series | S29GL512T | S29GL512T | S29GL512T |
| Packaging | Tray | Tray | Reel |
| Memory Type | NOR | NOR | NOR |
| Brand | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NOR Flash | NOR Flash | NOR Flash |
| Factory Pack Quantity | 91 | 91 | 1000 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | TSOP-56 | TSOP-56 |
| Memory Size | - | 512 Mbit | 512 Mbit |
| Organization | - | 64 M x 8 | 64 M x 8 |
| Timing Type | - | Asynchronous | Asynchronous |
| Data Bus Width | - | 8 bit, 16 bit | 8 bit, 16 bit |
| Supply Voltage Min | - | 2.7 V | 2.7 V |
| Supply Voltage Max | - | 3.6 V | 3.6 V |
| Supply Current Max | - | 100 mA, 60 mA | 100 mA, 60 mA |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Maximum Operating Temperature | - | + 105 C | + 105 C |
| Qualification | - | AEC-Q100 | AEC-Q100 |
| Speed | - | 110 ns | 110 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Cypress Semiconductor |
S29GL512T11TFIV30 | NOR Flash IC 512 Mb FLASH MEMORY | |
| S29GL512T11TFIV20 | NOR Flash Nor | ||
| S29GL512T11TFIV10 | NOR Flash Nor | ||
| S29GL512T11TFV020 | NOR Flash Nor | ||
| S29GL512T11TFV010 | NOR Flash Nor | ||
| S29GL512T11TFB023 | NOR Flash IC 512 Mb FLASHMEM | ||
| S29GL512T11TFIV33 | NOR Flash IC 512 Mb FLASH MEMORY | ||
| S29GL512T11TFB020 | IC 512 Mb FLASH MEMORY | ||
| S29GL512T11TFB023 | IC 512 MB FLASH MEMORY | ||
| S29GL512T11TFIV30 | IC 512 MB FLASH MEMORY | ||
| S29GL512T11TFIV33 | IC 512 MB FLASH MEMORY | ||
| S29GL512T11TFIV20 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED, VIO | ||
| S29GL512T11TFIV10 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO | ||
| S29GL512T11TFV020 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED | ||
| S29GL512T11TFV010 | Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED |