SBC807-1 stock, SBC807-1, SBC807-16LT1G


PartNumber	SBC807-16LT1G	SBC807-16LT3G	SBC807-16LT3
Description	Bipolar Transistors - BJT SS GP XSTR SPCL TR	Bipolar Transistors - BJT SS GP XSTR SPCL TR	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-23-3	SOT-23-3	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	45 V	45 V	-
Collector Base Voltage VCBO	50 V	50 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Maximum DC Collector Current	0.5 A	0.5 A	-
Gain Bandwidth Product fT	100 MHz	100 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	BC807-16L	BC807-16L	-
Height	0.94 mm	0.94 mm	-
Length	2.9 mm	2.9 mm	-
Packaging	Reel	Reel	-
Width	1.3 mm	1.3 mm	-
Brand	ON Semiconductor	ON Semiconductor	-
Pd Power Dissipation	300 mW	300 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Qualification	AEC-Q101	AEC-Q101	-
Factory Pack Quantity	3000	10000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.000282 oz	0.000282 oz	-

Search Part Number : "SBC807-1", Match & Start with "SBC807-1" - Total : 5

Hersteller	Teil #	Beschreibung
	SBC807-16LT1G	Bipolar Transistors - BJT SS GP XSTR SPCL TR
	SBC807-16LT3G	Bipolar Transistors - BJT SS GP XSTR SPCL TR
	SBC807-16LT3	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
ON Semiconductor	SBC807-16LT3G	Bipolar Transistors - BJT SS GP XSTR SPCL TR
ON Semiconductor	SBC807-16LT1G	Bipolar Transistors - BJT SS GP XSTR SPCL TR

SBC807-1