 | |  | |
| PartNumber | SBC846BPDW1T1G | SBC846BPDW1T2G | SBC846BPDW1T1 |
| Description | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | - Bulk (Alt: SBC846BPDW1T1) |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Transistor Polarity | NPN, PNP | NPN, PNP | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 65 V | 65 V | - |
| Collector Base Voltage VCBO | 80 V | 80 V | - |
| Emitter Base Voltage VEBO | 6 V, - 5 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.6 V | - 300 mV, 250 mV | - |
| Maximum DC Collector Current | 100 mA | 200 mA | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC846BPDW1 | BC846BPDW1 | - |
| DC Current Gain hFE Max | 475 at 2 mA, 5 V | 475 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V | 200 | - |
| Pd Power Dissipation | 380 mW | 250 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| SBC846BPDW1T1G | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | ||
| SBC846BPDW1T2G | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | ||
| SBC846BPDW1T1 | - Bulk (Alt: SBC846BPDW1T1) | ||
ON Semiconductor |
SBC846BPDW1T2G | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR | |
| SBC846BPDW1T1G | Bipolar Transistors - BJT SS SC88 DUAL GEN XSTR |