 |  | | |
| PartNumber | SBC847CDW1T1G | SBC847CDXV6T1G | SBC847CDW1T1 |
| Description | Bipolar Transistors - BJT SSP XSTR SC-88 NPN | Bipolar Transistors - BJT SS GP XSTR NPN 45V | TRANS 2NPN 45V 0.1A SOT-363 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 250 mV | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC846C | BC847CDXV6 | - |
| DC Current Gain hFE Max | 800 at 2 mA, 5 V | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 420 at 2 mA, 5 V | - | - |
| Pd Power Dissipation | 380 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 4000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000265 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| SBC847CDW1T1G | Bipolar Transistors - BJT SSP XSTR SC-88 NPN | ||
| SBC847CDXV6T1G | Bipolar Transistors - BJT SS GP XSTR NPN 45V | ||
| SBC847CDW1T1 | TRANS 2NPN 45V 0.1A SOT-363 | ||
ON Semiconductor |
SBC847CDXV6T1G | TRANS 2NPN 45V 0.1A SOT-563 | |
| SBC847CDW1T1G | Bipolar Transistors - BJT SSP XSTR SC-88 NPN |