SGF5

SGF5N150UFTU vs SGF5N150UF vs SGF5N150UF G5N150UF

 
PartNumberSGF5N150UFTUSGF5N150UFSGF5N150UF G5N150UF
DescriptionIGBT Transistors 1500V / 5A
ManufacturerON SemiconductorFSC-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-3PF-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1500 V--
Collector Emitter Saturation Voltage4.7 V4.7 V-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Continuous Collector Current at 25 C10 A10 A-
Pd Power Dissipation62.5 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSGF5N150UF--
PackagingTubeTube-
Continuous Collector Current Ic Max10 A10 A-
Height16.7 mm--
Length15.7 mm--
Width5.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current10 A--
Gate Emitter Leakage Current+/- 100 nA+/- 100 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity360--
SubcategoryIGBTs--
Part # AliasesSGF5N150UFTU_NL--
Unit Weight0.197534 oz0.245577 oz-
Part Aliases-SGF5N150UFTU_NL-
Package Case-SC-94-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-3PF-
Power Max-62.5W-
Reverse Recovery Time trr---
Current Collector Ic Max-10A-
Voltage Collector Emitter Breakdown Max-1500V-
IGBT Type---
Current Collector Pulsed Icm-20A-
Vce on Max Vge Ic-5.5V @ 10V, 5A-
Switching Energy-190μJ (on), 100μJ (off)-
Gate Charge-30nC-
Td on off 25°C-10ns/30ns-
Test Condition-600V, 5A, 10 Ohm, 10V-
Pd Power Dissipation-62.5 W-
Collector Emitter Voltage VCEO Max-1500 V-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGF5N150UFTU IGBT Transistors 1500V / 5A
SGF5N150UF Neu und Original
SGF5N150UF G5N150UF Neu und Original
SGF5NM50UF Neu und Original
ON Semiconductor
ON Semiconductor
SGF5N150UFTU IGBT Transistors 1500V / 5A
Top