SGH23N60UFDT

SGH23N60UFDTU vs SGH23N60UFDTU,G23N60RUFD vs SGH23N60UFDTU,G23N60RUFD,SGH23N60UFD

 
PartNumberSGH23N60UFDTUSGH23N60UFDTU,G23N60RUFDSGH23N60UFDTU,G23N60RUFD,SGH23N60UFD
DescriptionIGBT Transistors Dis High Perf IGBT
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-3P-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C23 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSGH23N60UFD--
PackagingTube--
Continuous Collector Current Ic Max23 A--
Height18.9 mm--
Length15.8 mm--
Width5 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current23 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Part # AliasesSGH23N60UFDTU_NL--
Unit Weight0.225789 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGH23N60UFDTU IGBT Transistors Dis High Perf IGBT
ON Semiconductor
ON Semiconductor
SGH23N60UFDTU IGBT 600V 23A 100W TO3P
SGH23N60UFDTU,G23N60RUFD Neu und Original
SGH23N60UFDTU,G23N60RUFD,SGH23N60UFD Neu und Original
Top