SGR6N

SGR6N60UFTF vs SGR6N60UFTM vs SGR6N60UF

 
PartNumberSGR6N60UFTFSGR6N60UFTMSGR6N60UF
DescriptionIGBT Transistors 600V/3AIGBT Transistors Dis High Perf IGBT
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSEE-
TechnologySiSi-
Package / CaseDPAK-3DPAK-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.1 V2.1 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C6 A6 A-
Pd Power Dissipation30 W30 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelReelTape & Reel (TR)
Continuous Collector Current Ic Max6 A6 A-
Height2.3 mm2.3 mm-
Length6.6 mm6.6 mm-
Width6.1 mm6.1 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current6 A6 A-
Gate Emitter Leakage Current+/- 100 nA+/- 100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity20002500-
SubcategoryIGBTsIGBTs-
Part # AliasesSGR6N60UFTF_NLSGR6N60UFTM_NL-
Unit Weight0.012346 oz0.009184 oz-
Series-SGR6N60UF-
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--30W
Reverse Recovery Time trr---
Current Collector Ic Max--6A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--25A
Vce on Max Vge Ic--2.6V @ 15V, 3A
Switching Energy--57μJ (on), 25μJ (off)
Gate Charge--15nC
Td on off 25°C--15ns/60ns
Test Condition--300V, 3A, 80 Ohm, 15V
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGR6N60UFTF IGBT Transistors 600V/3A
SGR6N60UFTM IGBT Transistors Dis High Perf IGBT
SGR6N60UF Neu und Original
ON Semiconductor
ON Semiconductor
SGR6N60UFTF IGBT 600V 6A 30W DPAK
SGR6N60UFTM IGBT 600V 6A 30W DPAK
Top