SGW10N60R

SGW10N60RUFDTM vs SGW10N60RUF vs SGW10N60RUFD

 
PartNumberSGW10N60RUFDTMSGW10N60RUFSGW10N60RUFD
DescriptionIGBT Transistors 600V/10A/W/FRD
ManufacturerON SemiconductorFSC-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSE--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.2 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C16 A--
Pd Power Dissipation75 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel--
Continuous Collector Current Ic Max16 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current10 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGW10N60RUFDTM IGBT Transistors 600V/10A/W/FRD
SGW10N60RUF Neu und Original
SGW10N60RUFD Neu und Original
ON Semiconductor
ON Semiconductor
SGW10N60RUFDTM IGBT 600V 16A 75W D2PAK
Top