 | | | |
| PartNumber | SH8MA3TB1 | SH8MA4TB1 | SH8MA2GZETB |
| Description | MOSFET 30V NCH+PCH POWER | MOSFET 30V NCH+PCH POWER | MOSFET 30V NCH+PCH POWER |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOP-8 | SOP-8 | SOP-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 7 A, 6 A | 9 A, 8.5 A | 4.5 A |
| Rds On Drain Source Resistance | 28 mOhms | 21 mOhms, 29.6 mOhms | 80 mOhms, 82 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 7.2 nC, 10 nC | 15.5 nC, 19.6 nC | 3 nC, 6.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.8 W | 3 W | 2.7 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Fall Time | 5.7 ns, 20 ns | 7 ns, 22 ns | 3.5 ns, 8.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns, 12 ns | 19 ns, 16 ns | 7.5 ns, 8 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns, 40 ns | 33 ns, 55 ns | 10 ns, 28 ns |
| Typical Turn On Delay Time | 7.2 ns, 8 ns | 8 ns, 10 ns | 5 ns, 7.2 ns |
| Part # Aliases | - | - | SH8MA2 |