 |  | | |
| PartNumber | SI1308EDL-T1-GE3 | SI1308 | SI1308EDL |
| Description | MOSFET 30V Vds 12V Vgs SC70-3 | ||
| Manufacturer | Vishay | - | VISHAY |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Rds On Drain Source Resistance | 132 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 2.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 500 mW | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | - | Reel |
| Height | 1.1 mm | - | - |
| Length | 2.1 mm | - | - |
| Series | SI1 | - | SI1308EDL |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 1.25 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 8 ns | - | 8 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | 9 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8 ns | - | 8 ns |
| Typical Turn On Delay Time | 2 ns | - | 2 ns |
| Part # Aliases | SI1300BDL-T1-GE3 SI1304BDL-T1-GE3 | - | - |
| Unit Weight | 0.000176 oz | - | 0.004395 oz |
| Part Aliases | - | - | SI1300BDL-T1-GE3 SI1304BDL-T1-GE3 |
| Package Case | - | - | SOT-323-3 |
| Pd Power Dissipation | - | - | 400 mW |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 1.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 0.6 V to 1.5 V |
| Rds On Drain Source Resistance | - | - | 132 mOhms |
| Qg Gate Charge | - | - | 1.4 nC |
| Forward Transconductance Min | - | - | 5 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1308EDL-T1-GE3 | MOSFET 30V Vds 12V Vgs SC70-3 | |
| SI1308 | Neu und Original | ||
| SI1308EDL | Neu und Original | ||
| SI1308EDL-T1-GE3-CUT TAPE | Neu und Original | ||
Vishay |
SI1308EDL-T1-GE3 | MOSFET N-CH 30V 1.4A SOT323 |