SI1410E

SI1410EDH vs SI1410EDH-T1 vs SI1410EDH-T1 , MAX6759UT

 
PartNumberSI1410EDHSI1410EDH-T1SI1410EDH-T1 , MAX6759UT
DescriptionMOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3
Manufacturer-VISHAY-
Product Category-FETs - Single-
Series-TrenchFET-
Packaging-Cut Tape (CT)-
Part Status-Obsolete-
FET Type-N-Channel-
Technology-MOSFET (Metal Oxide)-
Drain to Source Voltage (Vdss)-20V-
Current Continuous Drain (Id) @ 25°C-2.9A (Ta)-
Drive Voltage (Max Rds On, Min Rds On)-1.8V, 4.5V-
Vgs(th) (Max) @ Id-450mV @ 250A (Min)-
Gate Charge (Qg) (Max) @ Vgs-8nC @ 4.5V-
Vgs (Max)-±12V-
FET Feature---
Power Dissipation (Max)-1W (Ta)-
Rds On (Max) @ Id, Vgs-70 mOhm @ 3.7A, 4.5V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SC-70-6 (SOT-363)-
Package / Case-6-TSSOP, SC-88, SOT-363-
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI1410EDH-T1-E3 MOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3
SI1410EDH Neu und Original
SI1410EDH-T1 MOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3
SI1410EDH-T1 , MAX6759UT Neu und Original
SI1410EDH-T1 , MAX6759UTZD3 Neu und Original
SI1410EDH-T1-GE3 Neu und Original
SI1410EDHT1 Neu und Original
SI1410EDHT1E3 Neu und Original
SI1410EDHT1GE3 Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay
Vishay
SI1410EDH-T1-E3 MOSFET N-CH 20V 2.9A SC70-6
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