 | | |
| PartNumber | SI1869DH-T1-E3 | SI1869DH-T1-GE3 |
| Description | MOSFET -20V Vds 8V Vgs SOT-363 | MOSFET -20V Vds 8V Vgs SOT-363 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 1 A | - |
| Rds On Drain Source Resistance | 165 mOhms | - |
| Vgs Gate Source Voltage | 4.5 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI1869DH-E3 | SI1869DH-GE3 |
| Unit Weight | 0.000988 oz | 0.000265 oz |
| Height | - | 1 mm |
| Length | - | 2.1 mm |
| Width | - | 1.25 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1869DH-T1-E3 | MOSFET -20V Vds 8V Vgs SOT-363 | |
| SI1869DH-T1-GE3 | MOSFET -20V Vds 8V Vgs SOT-363 | ||
Vishay |
SI1869DH-T1-E3 | IC LOAD SW LVL SHIFT 20V SC70-6 | |
| SI1869DH-T1-GE3 | IC LOAD SW LEVEL SHIFTER SC-70-6 | ||
| SI1869DH-T1-E3-CUT TAPE | Neu und Original |