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| PartNumber | SI1922EDH-T1-GE3 | SI1922EDH-T | SI1922EDH-T1-E3 |
| Description | MOSFET 20V Vds 8V Vgs SC70-6 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.3 A | - | - |
| Rds On Drain Source Resistance | 198 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 2.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 2.1 mm | - | - |
| Series | SI1 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 4 S | - | - |
| Fall Time | 220 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 80 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 480 ns | - | - |
| Typical Turn On Delay Time | 43 ns | - | - |
| Part # Aliases | SI1988DH-T1-GE3 | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1922EDH-T1-GE3 | MOSFET 20V Vds 8V Vgs SC70-6 | |
| SI1922EDH-T | Neu und Original | ||
| SI1922EDH-T1-E3 | Neu und Original | ||
| SI1922EDH-T1-GE3-CUT TAPE | Neu und Original | ||
Vishay |
SI1922EDH-T1-GE3 | MOSFET 2N-CH 20V 1.3A SOT-363 |