 | | |
| PartNumber | SI2325DS-T1-E3 | SI2325DS-T1-GE3 |
| Description | MOSFET -150V Vds 20V Vgs SOT-23 | MOSFET -150V Vds 20V Vgs SOT-23 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | - |
| Id Continuous Drain Current | 690 mA | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 12 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1.25 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI2 | SI2 |
| Transistor Type | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 2.2 S | - |
| Fall Time | 11 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 11 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | - |
| Typical Turn On Delay Time | 7 ns | - |
| Part # Aliases | SI2325DS-E3 | SI2325DS-GE3 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| Height | - | 1.45 mm |
| Length | - | 2.9 mm |
| Width | - | 1.6 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2325DS-T1-E3 | MOSFET -150V Vds 20V Vgs SOT-23 | |
| SI2325DS-T1-GE3 | MOSFET -150V Vds 20V Vgs SOT-23 | ||
Vishay |
SI2325DS-T1-E3 | MOSFET P-CH 150V 0.53A SOT23-3 | |
| SI2325DS-T1-GE3 | MOSFET P-CH 150V 0.53A SOT-23 | ||
| SI2325DS-T1-E3 , MAX6425 | Neu und Original | ||
| SI2325DS-TI-E3 | Neu und Original | ||
| SI2325DS-T1-E3-CUT TAPE | Neu und Original |