SI3473D

SI3473DDV-T1-GE3 vs SI3473DV-T1-E3 vs SI3473DV-T1-GE3

 
PartNumberSI3473DDV-T1-GE3SI3473DV-T1-E3SI3473DV-T1-GE3
DescriptionMOSFET -12V Vds 8V Vgs TSOP-6MOSFET RECOMMENDED ALT 781-SI3473CDV-GE3MOSFET RECOMMENDED ALT 781-SI3473CDV-GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTSOP-6TSOP-6TSOP-6
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance38.8 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge38 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.6 W--
ConfigurationSingle--
PackagingReelReelReel
SeriesSi3473DDVSI3SI3
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min30 S--
Fall Time35 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time28 ns--
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time22 ns--
Tradename-TrenchFETTrenchFET
Height-1.1 mm-
Length-3.05 mm-
Width-1.65 mm-
Part # Aliases-SI3473DV-E3SI3473DV-GE3
Unit Weight-0.000705 oz0.000705 oz
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI3473DDV-T1-GE3 MOSFET -12V Vds 8V Vgs TSOP-6
SI3473DV-T1-E3 MOSFET RECOMMENDED ALT 781-SI3473CDV-GE3
SI3473DV-T1-GE3 MOSFET RECOMMENDED ALT 781-SI3473CDV-GE3
Vishay
Vishay
SI3473DV-T1-GE3 Neu und Original
SI3473DDV-T1-GE3 MOSFET P-CHANNEL 12V 8A 6TSOP
SI3473DV-T1-E3 MOSFET P-CH 12V 5.9A 6-TSOP
SI3473DV Neu und Original
SI3473DV-T1-E3 , LM4040A Neu und Original
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