SI3483C

SI3483CDV-T1-GE3 vs SI3483CDV-T1-E3 vs SI3483CDV

 
PartNumberSI3483CDV-T1-GE3SI3483CDV-T1-E3SI3483CDV
DescriptionMOSFET -30V Vds 20V Vgs TSOP-6MOSFET -30V Vds 20V Vgs TSOP-6
ManufacturerVishayVishayVISHAY
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance34 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation4.2 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSI3SI3-
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min13 S--
Fall Time10 ns--
Product TypeMOSFETMOSFET-
Rise Time15 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSI3483CDV-GE3SI3483CDV-E3-
Unit Weight0.000705 oz0.000705 oz-
Height-1.1 mm-
Length-3.05 mm-
Width-1.65 mm-
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI3483CDV-T1-GE3 MOSFET -30V Vds 20V Vgs TSOP-6
SI3483CDV-T1-E3 MOSFET -30V Vds 20V Vgs TSOP-6
SI3483CDV Neu und Original
SI3483CDV-T1-GE3-CUT TAPE Neu und Original
Vishay
Vishay
SI3483CDV-T1-E3 MOSFET P-CH 30V 8A 6-TSOP
SI3483CDV-T1-GE3 MOSFET P-CH 30V 8A 6-TSOP
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