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| PartNumber | SI4090DY-T1-GE3 | SI4090DY | SI4090DY-T1-E3 |
| Description | IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET | ||
| Manufacturer | Vishay Siliconix | - | - |
| Product Category | FETs - Single | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | SI4090DY-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | ThunderFET TrenchFET | - | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | 8-SO | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET N-Channel, Metal Oxide | - | - |
| Power Max | 7.8W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Drain to Source Voltage Vdss | 100V | - | - |
| Input Capacitance Ciss Vds | 2410pF @ 50V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 19.7A (Tc) | - | - |
| Rds On Max Id Vgs | 10 mOhm @ 15A, 10V | - | - |
| Vgs th Max Id | 3.3V @ 250μA | - | - |
| Gate Charge Qg Vgs | 69nC @ 10V | - | - |
| Pd Power Dissipation | 7.8 W | - | - |
| Id Continuous Drain Current | 19.7 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3.3 V | - | - |
| Rds On Drain Source Resistance | 10 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Qg Gate Charge | 27.9 nC | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay |
SI4090DY-T1-GE3 | IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET | |
| SI4090DY | Neu und Original | ||
| SI4090DY-T1-E3 | Neu und Original |