| PartNumber | SI4434DY-T1-E3 | SI4434DY-T1-GE3 | Si4434ADY-T1-GE3 |
| Description | MOSFET 250V Vds 20V Vgs SO-8 | MOSFET 250V Vds 20V Vgs SO-8 | MOSFET 250V Vds 20V Vgs SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | SO-8 |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | SI4 | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4434DY-E3 | SI4434DY-GE3 | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | - |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 250 V |
| Id Continuous Drain Current | - | - | 4.1 A |
| Rds On Drain Source Resistance | - | - | 150 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Vgs Gate Source Voltage | - | - | 10 V |
| Qg Gate Charge | - | - | 10.9 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 6 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Transistor Type | - | - | 1 N-Channel |
| Forward Transconductance Min | - | - | 10 S |
| Fall Time | - | - | 22 ns |
| Rise Time | - | - | 22 ns |
| Typical Turn Off Delay Time | - | - | 18 ns |
| Typical Turn On Delay Time | - | - | 8 ns |