 |  | | |
| PartNumber | SI4936CDY-T1-E3 | SI4936CDY | SI4936CDY-T1 |
| Description | MOSFET 30V Vds 20V Vgs SO-8 | ||
| Manufacturer | Vishay | - | VISHAY |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5.8 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.3 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI4 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 15 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4936CDY-T1-E3 | MOSFET 30V Vds 20V Vgs SO-8 | |
| SI4936CDY | Neu und Original | ||
| SI4936CDY-T1 | Neu und Original | ||
| SI4936CDY-T1-E3 GE3 | Neu und Original | ||
| SI4936CDY-T1-G3 | Neu und Original | ||
Vishay |
SI4936CDY-T1-E3 | MOSFET 2N-CH 30V 5.8A 8SO | |
| SI4936CDY-T1-GE3 | MOSFET 2N-CH 30V 5.8A 8-SOIC |