OMO ElectronicOMO Electronic
Expand menu
0 Wagen

SI498

SI4980-T1 vs SI4980DY vs SI4980DY-T1-E3

 
PartNumberSI4980-T1SI4980DYSI4980DY-T1-E3
DescriptionMOSFET 80V 3.7A 2WTransistor Polarity:Dual N Channel, Continuous Drain Current Id:3.7A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.062ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power
Hersteller Teil # Beschreibung RFQ
SI4980-T1 Neu und Original
SI4980DY MOSFET 80V 3.7A 2W
SI4980DY-T1-E3 Transistor Polarity:Dual N Channel, Continuous Drain Current Id:3.7A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.062ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power
SI4982DY MOSFET 100V 2.6A 2W
SI4982DY-T Neu und Original
SI4982DY-T1 MOSFET 100V 2.6A 2W
SI4982DY-T1-E3 Transistor Polarity:Dual N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.13ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power
SI4982 Neu und Original
Top