SI543

SI5432DC-T1-GE3 vs SI5433BDC-T1-E3 vs SI5433BDC-T1-GE3

 
PartNumberSI5432DC-T1-GE3SI5433BDC-T1-E3SI5433BDC-T1-GE3
DescriptionDarlington Transistors MOSFET 20V 6.0A 6.3W 20mohm @ 4.5VIGBT Transistors MOSFET 20V 6.7A 2.5WMOSFET P-CH 20V 4.8A 1206-8
ManufacturerVISHAYVISHAYVISHAY
Product CategoryFETs - SingleFETs - SingleFETs - Single
PackagingReel--
Part AliasesSI5432DC-GE3--
Unit Weight0.002998 oz--
Mounting StyleSMD/SMT--
Package CaseChipFET-8--
TechnologySi--
Number of Channels1 Channel--
ConfigurationSingle Hex Drain--
Transistor Type1 N-Channel--
Pd Power Dissipation2.5 W--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Fall Time12 ns--
Rise Time10 ns--
Vgs Gate Source Voltage12 V--
Id Continuous Drain Current6 A--
Vds Drain Source Breakdown Voltage20 V--
Rds On Drain Source Resistance20 mOhms--
Transistor PolarityN-Channel--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time15 ns--
Channel ModeEnhancement--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI5435BDC-T1-E3 MOSFET RECOMMENDED ALT 781-SI5403DC-T1-GE3
Vishay
Vishay
SI5432DC-T1-GE3 Darlington Transistors MOSFET 20V 6.0A 6.3W 20mohm @ 4.5V
SI5435BDC-T1-GE3 IGBT Transistors MOSFET 30V 5.9A 2.5W 45mohm @ 10V
SI5433BDC-T1-E3 IGBT Transistors MOSFET 20V 6.7A 2.5W
SI5433BDC-T1-GE3 MOSFET P-CH 20V 4.8A 1206-8
SI5435BDC-T1-E3 MOSFET P-CH 30V 4.3A 1206-8
SI5432DC Neu und Original
SI5432DC-T1-E3 Neu und Original
SI5432DC-T1-GE3-S Neu und Original
SI5432DC-T1-GE3/AJXA3 Neu und Original
SI5433BDC-1-GE3 Neu und Original
SI5433DC-T1 Neu und Original
SI5433DC-T1-E3 MOSFET RECOMMENDED ALT 78-SI5457DC-T1-GE3
SI5433DCT1 Neu und Original
SI5435DC Neu und Original
SI5435DC-T1 MOSFET RECOMMENDED ALT 781-SI5403DC-T1-GE3
SI5435DC-T1-E3 MOSFET RECOMMENDED ALT 781-SI5403DC-T1-GE3
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