 |  | | |
| PartNumber | SI5915BDC-T1-E3 | SI5915 | SI5915BDC-TI-GE3 |
| Description | MOSFET RECOMMENDED ALT 78-SI5935CDC-T1-GE3 | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Series | SI5 | TrenchFETR | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI5915BDC-E3 | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Package Case | - | 8-SMD, Flat Lead | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 1206-8 ChipFET | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 3.1W | - |
| Drain to Source Voltage Vdss | - | 8V | - |
| Input Capacitance Ciss Vds | - | 420pF @ 4V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 4A | - |
| Rds On Max Id Vgs | - | 70 mOhm @ 3.3A, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 14nC @ 8V | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5915DC-T1-E3 | MOSFET RECOMMENDED ALT 78-SI5935CDC-T1-GE3 | |
| SI5915BDC-T1-E3 | MOSFET RECOMMENDED ALT 78-SI5935CDC-T1-GE3 | ||
| SI5915 | Neu und Original | ||
| SI5915BDC-TI-GE3 | Neu und Original | ||
| SI5915DC | Neu und Original | ||
| SI5915DC-E3 | Neu und Original | ||
| SI5915DC-T1 | MOSFET Transistor, Matched Pair, P-Channel, CHIP | ||
| SI5915DC-T1-C | Neu und Original | ||
| SI5915DC-TI-E3 | Neu und Original | ||
| SI5915PC | Neu und Original | ||
Vishay |
SI5915BDC-T1-E3 | MOSFET 2P-CH 8V 4A 1206-8 | |
| SI5915DC-T1-E3 | Neu und Original | ||
| SI5915DC-T1-GE3 | MOSFET 2P-CH 8V 3.4A 1206-8 | ||
| SI5915BDC-T1-GE3 | MOSFET 2P-CH 8V 4A 1206-8 |