 |  | | |
| PartNumber | SI6473DQ-T1-E3 | SI6473DQ | SI6473DQ-TI |
| Description | MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 | 6200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSSOP-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.2 mm | - | - |
| Length | 4.4 mm | - | - |
| Series | SI6 | - | - |
| Width | 3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI6473DQ-E3 | - | - |
| Unit Weight | 0.005573 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6475DQ-T1-GE3 | MOSFET 12V 10A 1.75W 11mohm @ 4.5V | |
| SI6473DQ-T1-E3 | MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 | ||
| SI6475DQ-T1-GE3 | RF Bipolar Transistors MOSFET 12V 10A 1.75W 11mohm @ 4.5V | ||
| SI6473DQ | 6200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | ||
| SI6473DQ-TI | Neu und Original | ||
| SI6475DQ | Neu und Original | ||
| SI6475DQ-T1-E3 | MOSFET, FULL REEL, Transistor Polarity:N and P Channel, Continuous Drain Current Id:-7.8A, Drain Source Voltage Vds:-12V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshol | ||
Vishay |
SI6473DQ-T1-GE3 | MOSFET P-CH 20V 6.2A 8-TSSOP | |
| SI6473DQ-T1-E3 | MOSFET P-CH 20V 6.2A 8-TSSOP |