 | |  | |
| PartNumber | SI7108DN-T1-E3 | SI7108DN-T1-GE3 | SI7108DN-T1 |
| Description | MOSFET 20V 22A 0.0049Ohm | MOSFET 20V 22A 3.8W 4.9mohm @ 10V | |
| Manufacturer | Vishay | Vishay | VISHAY |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET/PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SI7 | SI7 | SI71xxDx |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI7108DN-E3 | SI7108DN-GE3 | - |
| Part Aliases | - | - | SI7108DN-E3 |
| Package Case | - | - | PowerPAK-1212-8 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 3.8 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 10 ns |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 22 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 4.9 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 60 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| Forward Transconductance Min | - | - | 88 S |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7108DN-T1-E3 | MOSFET 20V 22A 0.0049Ohm | |
| SI7108DN-T1-GE3 | MOSFET 20V 22A 3.8W 4.9mohm @ 10V | ||
| SI7108DN-T1 | Neu und Original | ||
Vishay |
SI7108DN-T1-GE3 | MOSFET N-CH 20V 14A 1212-8 | |
| SI7108DN-T1-E3 | Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R |