 | | |
| PartNumber | SI7190DP-T1-GE3 | Si7190ADP-T1-RE3 |
| Description | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Tradename | TrenchFET | - |
| Packaging | Reel | Reel |
| Series | SI7 | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI7190DP-GE3 | - |
| Unit Weight | 0.017870 oz | - |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 250 V |
| Id Continuous Drain Current | - | 14.4 A |
| Rds On Drain Source Resistance | - | 102 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 22.4 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 56.8 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Forward Transconductance Min | - | 11 S |
| Fall Time | - | 10 ns |
| Rise Time | - | 5 ns |
| Typical Turn Off Delay Time | - | 23 ns |
| Typical Turn On Delay Time | - | 13 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7190DP-T1-GE3 | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 | |
| Si7190ADP-T1-RE3 | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SI7190ADP-T1-RE3 | MOSFET N-CHAN 250V POWERPAK SO-8 | |
| SI7190DP-T1-GE3 | MOSFET N-CH 250V 18.4A PPAK SO-8 | ||
| SI7190DP | Neu und Original | ||
| SI7190DP-T1 | Neu und Original | ||
| SI7190DP-T1-E3 | Neu und Original |