PartNumber | SI7236DP-T1-E3 | SI7236 | SI7236DP |
Description | RF Bipolar Transistors MOSFET 20V 60A 46W | ||
Manufacturer | Vishay Siliconix | - | - |
Product Category | FETs - Arrays | - | - |
Series | TrenchFETR | - | - |
Packaging | Tape & Reel (TR) | - | - |
Part Aliases | SI7236DP-E3 | - | - |
Unit Weight | 0.017870 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | PowerPAKR SO-8 Dual | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 2 Channel | - | - |
Supplier Device Package | PowerPAKR SO-8 Dual | - | - |
Configuration | Dual | - | - |
FET Type | 2 N-Channel (Dual) | - | - |
Power Max | 46W | - | - |
Transistor Type | 2 N-Channel | - | - |
Drain to Source Voltage Vdss | 20V | - | - |
Input Capacitance Ciss Vds | 4000pF @ 10V | - | - |
FET Feature | Standard | - | - |
Current Continuous Drain Id 25°C | 60A | - | - |
Rds On Max Id Vgs | 5.2 mOhm @ 20.7A, 4.5V | - | - |
Vgs th Max Id | 1.5V @ 250μA | - | - |
Gate Charge Qg Vgs | 105nC @ 10V | - | - |
Pd Power Dissipation | 3.5 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 22 ns 10 ns | - | - |
Rise Time | 100 ns 15 ns | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Id Continuous Drain Current | 20.7 A | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Rds On Drain Source Resistance | 5.2 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 80 ns 60 ns | - | - |
Typical Turn On Delay Time | 30 ns 10 ns | - | - |
Channel Mode | Enhancement | - | - |