 |  | | |
| PartNumber | SI7615DN-T1-GE3 | SI7615DN-T1 | SI7615DN-T1-E3 |
| Description | MOSFET RECOMMENDED ALT 78-SI7615ADN-T1-GE3 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 3.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 183 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 52 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SI7 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 70 S | - | - |
| Fall Time | 28 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 38 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Part # Aliases | SI7615DN-GE3 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7615DN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI7615ADN-T1-GE3 | |
Vishay |
SI7615DN-T1-GE3 | IGBT Transistors MOSFET 20V 35A 52W 3.9mohm @ 10V | |
| SI7615DN-T1 | Neu und Original | ||
| SI7615DN-T1-E3 | Neu und Original |