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| PartNumber | SI7850DP-T1-E3 | SI7850DP-T1-E3-CUT TAPE | SI7850DP-T1-E3. |
| Description | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | Transistor Polarity:N Channel, Continuous Drain Current Id:10.3A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.022ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Diss | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 10.3 A | - | - |
| Rds On Drain Source Resistance | 22 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 27 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 4.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SI7 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 26 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SI7850DP-E3 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7850DP-T1-E3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | |
| SI7850DP-T1-E3-CUT TAPE | Neu und Original | ||
| SI7850DP-T1-E3. | Transistor Polarity:N Channel, Continuous Drain Current Id:10.3A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.022ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Diss | ||
Vishay |
SI7850DP-T1-E3 | MOSFET N-CH 60V 6.2A PPAK SO-8 |