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| PartNumber | SI7949DP-T1-E3 | SI7949DP-T1-GE3 | SI7949DP |
| Description | MOSFET -60V Vds 20V Vgs PowerPAK SO-8 | MOSFET -60V Vds 20V Vgs PowerPAK SO-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SI7 | SI7 | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI7949DP-E3 | SI7949DP-GE3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 5 A | - |
| Rds On Drain Source Resistance | - | 64 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 40 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 3.5 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 2 P-Channel | - |
| Forward Transconductance Min | - | 16 S | - |
| Fall Time | - | 30 ns | - |
| Rise Time | - | 9 ns | - |
| Typical Turn Off Delay Time | - | 65 ns | - |
| Typical Turn On Delay Time | - | 8 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7949DP-T1-E3 | MOSFET -60V Vds 20V Vgs PowerPAK SO-8 | |
| SI7949DP-T1-GE3 | MOSFET -60V Vds 20V Vgs PowerPAK SO-8 | ||
| SI7949DP | Neu und Original | ||
Vishay |
SI7949DP-T1-E3 | MOSFET 2P-CH 60V 3.2A PPAK SO-8 | |
| SI7949DP-T1-GE3 | MOSFET 2P-CH 60V 3.2A PPAK SO-8 |