SI9433BDY-T

SI9433BDY-T1 vs SI9433BDY-T1 SOP8 vs SI9433BDY-T1-E

 
PartNumberSI9433BDY-T1SI9433BDY-T1 SOP8SI9433BDY-T1-E
DescriptionMOSFET 20V 6.2A 2.3W
Manufacturer--Vishay Siliconix
Product Category--FETs - Single
Series---
Packaging--Digi-ReelR Alternate Packaging
Part Aliases--SI9433BDY-E3
Unit Weight--0.017870 oz
Mounting Style--SMD/SMT
Tradename--TrenchFET/PowerPAK
Package Case--8-SOIC (0.154", 3.90mm Width)
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--8-SO
Configuration--Single
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--1.3W
Transistor Type--1 P-Channel
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds---
FET Feature--Standard
Current Continuous Drain Id 25°C--4.5A (Ta)
Rds On Max Id Vgs--40 mOhm @ 6.2A, 4.5V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--14nC @ 4.5V
Pd Power Dissipation--1.3 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--55 ns
Rise Time--55 ns
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--4.5 A
Vds Drain Source Breakdown Voltage--- 20 V
Rds On Drain Source Resistance--40 mOhms
Transistor Polarity--P-Channel
Typical Turn Off Delay Time--65 ns
Typical Turn On Delay Time--40 ns
Forward Transconductance Min--15 S
Channel Mode--Enhancement
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI9433BDY-T1-E3 MOSFET 20V 6.2A 0.04Ohm
SI9433BDY-T1-GE3 MOSFET 20V 6.2A 2.5W 40mohm @ 4.5V
SI9433BDY-T1-E3-CUT TAPE Neu und Original
SI9433BDY-T1-GE3-CUT TAPE Neu und Original
SI9433BDY-T1 MOSFET 20V 6.2A 2.3W
SI9433BDY-T1 SOP8 Neu und Original
SI9433BDY-T1-E Neu und Original
Vishay
Vishay
SI9433BDY-T1-E3 MOSFET P-CH 20V 4.5A 8-SOIC
SI9433BDY-T1-GE3 MOSFET P-CH 20V 4.5A 8-SOIC
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