PartNumber | SIA517DJ-T1-GE3 | SIA513DJ-T1-GE3 | SIA511DJ-T1-GE3 |
Description | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 | MOSFET RECOMMENDED ALT 781-SIA519EDJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIA517DJ-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 12 V | - | - |
Id Continuous Drain Current | 4.5 A | - | - |
Rds On Drain Source Resistance | 29 mOhms, 61 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 15 nC, 20 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 6.5 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET, PowerPAK | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 0.75 mm | 0.75 mm | - |
Length | 2.05 mm | 2.05 mm | - |
Series | SIA | SIA | SIA |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Width | 2.05 mm | 2.05 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 21 S, 11 S | - | - |
Fall Time | 10 ns, 20 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns, 25 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 22 ns, 30 ns | - | - |
Typical Turn On Delay Time | 10 ns, 30 ns | - | - |
Part # Aliases | SIA517DJ-GE3 | SIA513DJ-GE3 | SIA511DJ-GE3 |
Unit Weight | 0.000988 oz | 0.000988 oz | 0.000988 oz |