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| PartNumber | SIA975DJ-T1-GE3 | SIA975DJ | SIA975DJ-T1-GE |
| Description | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SC70-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 33 mOhms, 33 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 26 nC, 26 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 125 C | - |
| Pd Power Dissipation | 7.8 W | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | SIA | TrenchFETR | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 12 S, 12 S | - | - |
| Fall Time | 15 ns, 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns, 22 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns, 32 ns | - | - |
| Typical Turn On Delay Time | 22 ns, 22 ns | - | - |
| Part # Aliases | SIA975DJ-GE3 | - | - |
| Unit Weight | 0.000988 oz | 0.000988 oz | - |
| Part Aliases | - | SIA975DJ-GE3 | - |
| Package Case | - | PowerPAKR SC-70-6 Dual | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR SC-70-6 Dual | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 7.8W | - |
| Drain to Source Voltage Vdss | - | 12V | - |
| Input Capacitance Ciss Vds | - | 1500pF @ 6V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 4.5A | - |
| Rds On Max Id Vgs | - | 41 mOhm @ 4.3A, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 26nC @ 8V | - |
| Pd Power Dissipation | - | 7.8 W | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | - 4.5 A | - |
| Vds Drain Source Breakdown Voltage | - | - 12 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 1 V | - |
| Rds On Drain Source Resistance | - | 41 mOhms | - |
| Qg Gate Charge | - | 17 nC | - |
| Forward Transconductance Min | - | 12 S | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA975DJ-T1-GE3 | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | |
| SIA975DJ | Neu und Original | ||
| SIA975DJ-T1-GE | Neu und Original | ||
Vishay |
SIA975DJ-T1-GE3 | MOSFET 2P-CH 12V 4.5A SC-70-6 |